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Abstract This study investigates the structural, electronic, and magnetic properties of XBr₂, XI₂, and XBrI (X = Mn, Co) compounds using density functional theory, incorporating spin–orbit coupling and the GGA + U framework. Cohesive and formation energy calculations reveal that MnBr₂is most stable in the ferromagnetic phase, while the other compounds favor antiferromagnetic ordering. The inclusion of the effective Coulomb screening potential (U_eff) enhances the localization of 3d orbitals, leading to increased magnetic moments. Electronic structure analyses show that most compounds transition to semiconducting behavior in the antiferromagnetic phase—except CoI₂—while MnBr₂, CoBr₂, and CoI₂exhibit half-metallicity in the ferrimagnetic phase. In the antiferromagnetic phase, MnBr₂, MnI₂, and MnBrI display topological Dirac-like points between theRand Γ points, suggesting the presence of massless fermions and enabling phenomena such as the quantum Hall effect and ultra-high carrier mobility. The computational results are consistent with available experimental data, highlighting the potential of Mn- and Co-based van der Waals compounds for spintronic and quantum applications. 

The present work investigates the interfacial and atomic layer-dependent mechanical properties, SOC-entailing phonon band structure, and comprehensive electron-topological–elastic integration of ZrTe2 and NiTe2. The anisotropy of Young’s modulus, Poisson’s ratio, and shear modulus are analyzed using density functional theory with the TB-mBJ approximation. NiTe2 has higher mechanical property values and greater anisotropy than ZrTe2. Phonon dispersion analysis with SOC effects predicts the dynamic stability of both compounds. Thus, the current research unifies electronic band structure analysis, topological characterization, and elastic property calculation to reveal how these transition metal dichalcogenides are influenced by their structural, electronic, and mechanical properties. The results obtained in this work can be used in the further development of spintronic and nanoelectronic devices. 

In this computational study, density functional theory (DFT) is employed to analyze the structural, electronic, elastic, and topological properties of ternary compounds MXY (M = Ti, Sn, Ir, X = Se, Te, Y = Se, Te). The effects of spin–orbit interaction and pressure‐induced strain are investigated to understand their influence on the stability, mechanical properties, and electronic behavior, paving the way for potential technological applications. The findings confirm that these compounds are inherently stable in nonmagnetic phases, with spin–orbit interaction critically influencing their energy–volume landscapes. The calculated lattice parameters, ratios of lattice constants, and bulk moduli closely align with existing data, confirming the reliability of our approach. Mechanical assessments reveal distinct behaviors: IrSe₂exhibits the highest stiffness due to pronounced covalent bonding, contrasting with SnTe₂'s elastic anisotropy and SnSeTe's nearly isotropic properties. Electronically, most compounds show metallic characteristics, except SnSe₂, which behaves as a semiconductor with an indirect, pressure‐sensitive energy bandgap. Topological analysis under varying hydrostatic pressures indicates band inversions in TiSe₂, IrSe₂, and SnSeTe, suggesting topological phase transitions absent in other compounds. This study enriches our understanding of these materials and refines the application of DFT in material design. 

Two-dimensional (2D) topological insulators (TIs) hold great promise for future quantum information technologies. Among the 2D-TIs, the TiNI monolayer has recently been proposed as an ideal material for achieving the quantum spin Hall effect at room temperature. Theoretical predictions suggest a sizable bandgap due to the spin–orbit coupling (SOC) of the electrons at and near the Fermi level with a nontrivial  2 topology of the electronic states, which is robust under external strain. However, our detailed first-principles calculations reveal that, in contrast to these predictions, the TiNI monolayer has a trivial bandgap in the equilibrium state with no band inversion, despite SOC opening the bandgap. Moreover, we show that electron correlation effects significantly impact the topological and structural stabilities of the system under external strains. We employed a range of density functional theory (DFT) approaches, including HSE06, PBE0, TB-mBJ, and GGA+ U , to comprehensively investigate the nontrivial topological properties of this monolayer. Our results demonstrate that using general-purpose functionals such as PBE-GGA for studying TIs can lead to false predictions, potentially misleading experimentalists in their efforts to discover new TIs. 

Abstract We report the topological phase and thermoelectric properties of bialkali bismuthide compounds (Na, K) 2 RbBi, as yet hypothetical. The topological phase transitions of these compounds under hydrostatic pressure are investigated. The calculated topological surface states and Z 2 topological index confirm the nontrivial topological phase. The electronic properties and transport coefficients are obtained using the density functional theory combined with the Boltzmann transport equation. The relaxation times are determined using the deformation potential theory to calculate the electronic thermal and electrical conductivity. The calculated mode Grüneisen parameters are substantial, indicating strong anharmonic acoustic phonons scattering, which results in an exceptionally low lattice thermal conductivity. These compounds also have a favorable power factor leading to a relatively flat p-type figure-of-merit over a broad temperature range. Furthermore, the mechanical properties and phonon band dispersions show that these structures are mechanically and dynamically stable. Therefore, they offer excellent candidates for practical applications over a wide range of temperatures. 

Using first-principles calculations, we predict highly stable cubic bialkali bismuthides Cs(Na, K)2Bi with several technologically important mechanical and anisotropic elastic properties. We investigate the mechanical and anisotropic elastic properties under hydrostatic tension and compression. At zero pressure, CsK2Bi is characterized by elastic anisotropy with maximum and minimum stiffness along the directions of [111] and [100], respectively. Unlike CsK2Bi, CsNa2Bi exhibits almost isotropic elastic behavior at zero pressure. We found that hydrostatic tension and compression change the isotropic and anisotropic mechanical responses of these compounds. Moreover, the auxetic nature of the CsK2Bi compound is tunable under pressure. This compound transforms into a material with a positive Poisson’s ratio under hydrostatic compression, while it holds a large negative Poisson’s ratio of about −0.45 along the [111] direction under hydrostatic tension. An auxetic nature is not observed in CsNa2Bi, and Poisson’s ratio shows completely isotropic behavior under hydrostatic compression. A directional elastic wave velocity analysis shows that hydrostatic pressure effectively changes the propagation pattern of the elastic waves of both compounds and switches the directions of propagation. Cohesive energy, phonon dispersion, and Born–Huang conditions show that these compounds are thermodynamically, mechanically, and dynamically stable, confirming the practical feasibility of their synthesis. The identified mechanisms for controlling the auxetic and anisotropic elastic behavior of these compounds offer a vital feature for designing and developing high-performance nanoscale electromechanical devices.